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PE8260M PDFN3.3x3.3-8L

    PE8260M是VDS=20V,ID=22A,RDS(ON)<4m?,@VGS=4.5V,RDS(ON)<5.4m?,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8260M的絲印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封裝.
    The PE8260M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8260M概述：
        PE8260M是VDS=20V,ID=22A,RDS(ON)<4m?,@VGS=4.5V,RDS(ON)<5.4m?,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8260M的絲印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封裝.
        The PE8260M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8260M特性：
    VDS = 20V, ID = 22A
    RDS(ON) < 4m? @ VGS=4.5V
    RDS(ON) < 5.4m? @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8260M應(yīng)用：
    PWM applications
    Load switch

    PE8260M典型應(yīng)用及引腳：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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