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PE8262M PDFN3.3x3.3-8L

    PE8262M是VDS=20V,ID=25A,RDS(ON)<3.5m?,@VGS=4.5V,RDS(ON)<5.0m?,@VGS=2.5V,RDS(ON)<8.0m?,@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
    PE8262M的絲印是PE8262M.PE8262M提供PDFN3.3x3.3-8L封裝.
    The PE8262M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8262M概述：
        PE8262M是VDS=20V,ID=25A,RDS(ON)<3.5m?,@VGS=4.5V,RDS(ON)<5.0m?,@VGS=2.5V,RDS(ON)<8.0m?,@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
        PE8262M的絲印是PE8262M.PE8262M提供PDFN3.3x3.3-8L封裝.
        The PE8262M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8262M特性：
    VDS = 20V, ID = 25A
    RDS(ON) < 3.5m?@VGS=4.5V
    RDS(ON) < 5.0m? @VGS=2.5V
    RDS(ON) < 8.0m?@VGS=1.8V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8262M應(yīng)用：
    PWM applications
    Load switch
    Battery Protection

    PE8262M典型應(yīng)用及引腳：


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