MXN30D12M概述：
MXN30D12M是VDS=30V，ID=12A，@VGS=4.5V，RDS(ON)(Typ.)=14m?，@VGS=2.5V，RDS(ON)(Typ.)=18m?的雙N通道MOSFET.
MXN30D12M提供PDFN3.3x3.3-8L封裝.
The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
MXN30D12M特性：
VDS=30V，ID=12A
@VGS=4.5V RDS(ON)(Typ.)=14m?
@VGS=2.5V RDS(ON)(Typ.)=18m?
High density cell design fo ultra low Rdson
Fully characterized Avalanche voltage and current
MXN30D12M應(yīng)用：
Power switching application
Hard Switched and High Frequency
Circuits Uninterruptible Power Supply
MXN30D12M典型應(yīng)用及引腳圖：
MXN30D12M典型應(yīng)用及引腳圖：
Business consulting
13823761625
Mail me