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MX30D10 SOP8

    MX30D10是VDS=30V，ID=10A，RDS(ON)(Typ.)11.5m?@Vgs=10V，RDS(ON)(Typ.)14.5m?@Vgs=4.5V的雙N溝道MOSFET.
    MX30D10的絲印是30D10.MX30D10提供SOP-8封裝.
    The MX30D10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.
    MX30D10概述：
        MX30D10是VDS=30V，ID=10A，RDS(ON)(Typ.)11.5m?@Vgs=10V，RDS(ON)(Typ.)14.5m?@Vgs=4.5V的雙N溝道MOSFET.
        MX30D10的絲印是30D10.MX30D10提供SOP-8封裝.
        The MX30D10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.

    MX30D10特性：
    VDS =30V，ID =10A
    RDS(ON)(Typ.)11.5m? @ Vgs=10V
    RDS(ON)(Typ.)14.5m? @ Vgs=4.5V
    High density cell design for ultra low Rdson
    Fully characterized Avalanche voltage and current
    MX30D10提供SOP8封裝

    MX30D10應(yīng)用市場：
    Power switching application
    Hard Switched and High Frequency Circuits
    Uninterruptible Power Supply

    MX30D10典型應(yīng)用及引腳圖：

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