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雙P-MOS

PE30P17S SOP8

    PE30P17S是VDS=-30V,ID=-17A，RDS(ON)<6.5m?，@VGS=-10V，RDS(ON)<10m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE30P17S的絲印是PE30P17S.PE30P17S提供SOP-8封裝.
    The PE30P17S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30P17S概述：
        PE30P17S是VDS=-30V,ID=-17A，RDS(ON)<6.5m?，@VGS=-10V，RDS(ON)<10m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P17S的絲印是PE30P17S.PE30P17S提供SOP-8封裝.
        The PE30P17S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30P17S特性：
    VDS = -30V, ID = -17A
    RDS(ON) < 6.5m? @ VGS=-10V
    RDS(ON) < 10m?@VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE30P17S應(yīng)用：
    PWM applications
    Load switch
    Power management
    Battery Protection

    PE30P17S典型應(yīng)用及引腳圖：

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