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雙N-MOS

MXN30D12M PDFN3.3x3.3-8L

    MXN30D12M是VDS=30V，ID=12A，@VGS=4.5V，RDS(ON)(Typ.)=14m?，@VGS=2.5V，RDS(ON)(Typ.)=18m?的雙N通道MOSFET.
    MXN30D12M提供PDFN3.3x3.3-8L封裝.
    The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
    MXN30D12M概述：
        MXN30D12M是VDS=30V，ID=12A，@VGS=4.5V，RDS(ON)(Typ.)=14m?，@VGS=2.5V，RDS(ON)(Typ.)=18m?的雙N通道MOSFET.
        MXN30D12M提供PDFN3.3x3.3-8L封裝.
        The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
     
    MXN30D12M特性：
    VDS=30V，ID=12A
    @VGS=4.5V RDS(ON)(Typ.)=14m?
    @VGS=2.5V RDS(ON)(Typ.)=18m?
    High density cell design fo ultra low Rdson
    Fully characterized Avalanche voltage and current

    MXN30D12M應(yīng)用：
    Power switching application
    Hard Switched and High Frequency
    Circuits Uninterruptible Power Supply

    MXN30D12M典型應(yīng)用及引腳圖：
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