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雙N-MOS

MXN2384 DFN2x3-6L

    MXN2384是VDS=20V,ID=9.5A,@VGS=4.5V,RDS(ON)(Typ.)=7.8m?,@VGS=4.2V,RDS(ON)(Typ.)=8m?,@VGS=3.8V,RDS(ON)(Typ.)=8.3m?,@VGS=2.5V,RDS(ON)(Typ.)=11m?的Dual N-Channel MOSFET.
    MXN2384的絲印是SC29.MXN2384提供DFN2x3-6L封裝.
    The MXN2384 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
    This device is suitable for use as aload switch or in PWM applications. It is ESD protested..

    MXN2384概述:
        MXN2384是VDS=20V,ID=9.5A,@VGS=4.5V,RDS(ON)(Typ.)=7.8m?,@VGS=4.2V,RDS(ON)(Typ.)=8m?,@VGS=3.8V,RDS(ON)(Typ.)=8.3m?,@VGS=2.5V,RDS(ON)(Typ.)=11m?的Dual N-Channel MOSFET.MXN2384的絲印是SC29.MXN2384提供DFN2x3-6L封裝.
        The MXN2384 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested..

    MXN2384特性:

    VDS =20V,ID =9.5A
    @VGS=4.5V RDS(ON)(Typ.)=7.8m?
    @VGS=4.2V RDS(ON)(Typ.)=8m?
    @VGS=3.8V RDS(ON)(Typ.)=8.3m?
    @VGS=2.5V RDS(ON)(Typ.)=11m?
    ESD Rating:2000V HBM
    High power and current handing capability
    Lead free product is acquired
    Surface mount package

    MXN2384應(yīng)用:

    PWM applications
    Load switch

    MXN2384典型應(yīng)用及引腳圖:

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