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MXN3384概述：
    MXN3384是VDS=20V，ID=6A，@VGS=4.5V，RDS(ON)(Typ.)=12.5m?，@VGS=3.8V，RDS(ON)(Typ.)=13m?，@VGS=2.5V，RDS(ON)(Typ.)=16.5m?的Dual N-Channe MOSFET.
    MXN3384提供DFN3x3-8L封裝.
    The MXN3384 uses advanced trench technology design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected.

MXN3384特性：
VDS =20V，ID =6A
@VGS=4.5V RDS(ON)(Typ.)=12.5m?
@VGS=3.8V RDS(ON)(Typ.)=13m?
@VGS=2.5V RDS(ON)(Typ.)=16.5m?
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current

MXN3384應(yīng)用：
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply

MXN3384典型應(yīng)用及引腳圖：