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單P-MOS

PED20D09M PDFN3.3x3.3-8L

    PED20D09M是VDS=-18V，ID=-9A，RDS(ON)<20m?@VGS=-10V，RDS(ON)<25m?@VGS=-4.5V，RDS(ON)<30m?@VGS=-2.5V的P溝道MOSFET。
    PED20D09M的絲印是20D09M,PED20D09M提供PDFN3.3x3.3-8L封裝。
    The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED20D09M概述：
        PED20D09M是VDS=-18V，ID=-9A，RDS(ON)<20m?@VGS=-10V，RDS(ON)<25m?@VGS=-4.5V，RDS(ON)<30m?@VGS=-2.5V的P溝道MOSFET。PED20D09M的絲印是20D09M,PED20D09M提供PDFN3.3x3.3-8L封裝。
        The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED20D09M特性：
    VDS = -18V, ID = -9A
    RDS(ON) < 20m? @VGS=-10V
    RDS(ON) < 25m? @VGS=-4.5V
    RDS(ON) < 30m? @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED20D09M應(yīng)用：
    PWM applications
    Load switch
    Power management

    PED20D09M典型應(yīng)用及引腳：

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