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PED2015M是VDS=-20V，ID=-40A，RDS(ON)<11m?@VGS=-4.5V，RDS(ON)<15m?@VGS=-2.5V的P溝道MOSFET。
PED2015M的絲印是PED2015M，PED2015M提供PDFN3.3x3.3-8L封裝。

The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED2015M概述：

PED2015M是VDS=-20V，ID=-40A，RDS(ON)<11m?@VGS=-4.5V，RDS(ON)<15m?@VGS=-2.5V的P溝道MOSFET。PED2015M的絲印是PED2015M，PED2015M提供PDFN3.3x3.3-8L封裝。

The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED2015M特性：

VDS = -20V, ID = -40A

RDS(ON) < 11m? @ VGS=-4.5V

RDS(ON) < 15m? @ VGS=-2.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PED2015M應(yīng)用：

PWM applications

Load switch

Power management

PED2015M典型應(yīng)用及引腳：