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PE30P11DS SOP8

    PE30P11DS是VDS=-30V,ID=-10A，RDS(ON)<17m?，@VGS=-10V，RDS(ON)<25m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE30P11DS的絲印是PE30P11DS.PE30P11DS提供SOP-8封裝. 
  The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30P11DS概述：
        PE30P11DS是VDS=-30V,ID=-10A，RDS(ON)<17m?，@VGS=-10V，RDS(ON)<25m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P11DS的絲印是PE30P11DS.PE30P11DS提供SOP-8封裝.
        The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30P11DS特性：
    VDS = -30V, ID = -10A
    RDS(ON) < 17m? @ VGS=-10V
    RDS(ON) < 25m? @VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE30P11DS應用：
    PWM applications
    Load switch
    Power management

    PE30P11DS典型應用及引腳圖：

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