PED645K概述:
PED645K是VDS=18V,ID=10A,RDS(ON)<6.5m?@VGS=4.5V,RDS(ON)<7m?@VGS=3.8V,RDS(ON<8.5m?@VGS=2.5V的N溝道MOSFET。PED645K的絲印是645K,PED645K提供DFN3x3-8L封裝。
The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED645K特性:
VDS = 18V, ID = 10A
RDS(ON) < 6.5m? @VGS=4.5V
RDS(ON) < 7m?@VGS=3.8V
RDS(ON) < 8.5m? @VGS=2.5V
ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED645K應(yīng)用:
PWM applications
Load switch
Power management
Battery protection
PED645K典型應(yīng)用及引腳: