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PED645K DFN3x3-8L

    PED645K是VDS=18V,ID=10A,RDS(ON)<6.5m?@VGS=4.5V,RDS(ON)<7m?@VGS=3.8V,RDS(ON<8.5m?@VGS=2.5V的N溝道MOSFET。
    PED645K的絲印是645K,PED645K提供DFN3x3-8L封裝。
    The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PED645K概述:
        PED645K是VDS=18V,ID=10A,RDS(ON)<6.5m?@VGS=4.5V,RDS(ON)<7m?@VGS=3.8V,RDS(ON<8.5m?@VGS=2.5V的N溝道MOSFET。PED645K的絲印是645K,PED645K提供DFN3x3-8L封裝。
        The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PED645K特性:
    VDS = 18V, ID = 10A
    RDS(ON) < 6.5m? @VGS=4.5V
    RDS(ON) < 7m?@VGS=3.8V
    RDS(ON) < 8.5m? @VGS=2.5V
    ESD Rating: 2000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED645K應(yīng)用:
    PWM applications
    Load switch
    Power management
    Battery protection

    PED645K典型應(yīng)用及引腳:

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