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MX4408 SOP8

N-Channel Enhancement Mode Power MOSFET,VDS=30V, ID=13A RDS(ON)(Typ.)=10mΩ@VGS=4.5V,RDS(ON)(Typ.)=7mΩ@VGS=10V,MX4408 SOP8,The MX4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
    MX4408 Description:
        The MX4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.

    MX4408 Features:
    VDS=30V, ID=13A RDS(ON)(Typ.)=10mΩ@VGS=4.5V,RDS(ON)(Typ.)=7mΩ@VGS=10V
    Hign density cell design for ultra low Rdson
    Lead free product is acquired

    MX4408 Applications:
    Battery protection
    Load switch
    Power management

    MX4408 Pinout:


    MX4408 Ordering Information:
    Part Number
    Marking
    StorageTemperature
    Package
    Devices Per Reel
    MX4408
    4408
    -55°C to 150°C
    SOP-8
    3000




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