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PE58120G DFN5x6-8L

    PE58120G是VDS=85V,ID=90A，RDS(ON)<6m? ，@VGS=10V，RDS(ON)<6.5m? ，@VGS=8V的N-Channel Enhancement Mode Power MOSFET.
    PE58120G的絲印是PE58120G.PE58120G提供DFN5x6-8L封裝.
    The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE58120G概述：
        PE58120G是VDS=85V,ID=90A，RDS(ON)<6m? ，@VGS=10V，RDS(ON)<6.5m? ，@VGS=8V的N-Channel Enhancement Mode Power MOSFET.PE58120G的絲印是PE58120G.PE58120G提供DFN5x6-8L封裝.
        The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58120G特性：
    VDS = 85V, ID = 90A
    RDS(ON) < 6m?  @VGS=10V
    RDS(ON) < 6.5m?  @VGS=8V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58120G應(yīng)用：
    PWM applications
    Load switch
    Power management

    PE58120G典型應(yīng)用及引腳：

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