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S-P-MOS

PED2013M PDFN3.3x3.3-8L

    PED2013M是VDS=-20V，ID=-40A，RDS(ON)<7m?@VGS=-10V，RDS(ON)<8.5m?@VGS=-4.5V，RDS(ON)<14m?@VGS=-2.5V的P溝道MOSFET。
    PED2013M的絲印是PED2013M，PED2013M提供PDFN3.3x3.3-8L封裝。
    The PED2013M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED2013M概述：
        PED2013M是VDS=-20V，ID=-40A，RDS(ON)<7m?@VGS=-10V，RDS(ON)<8.5m?@VGS=-4.5V，RDS(ON)<14m?@VGS=-2.5V的P溝道MOSFET。PED2013M的絲印是PED2013M，PED2013M提供PDFN3.3x3.3-8L封裝。
        The PED2013M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED2013M特性：
    VDS = -20V, ID = -40A
    RDS(ON) < 7m? @ VGS=-10V
    RDS(ON) < 8.5m? @ VGS=-4.5V
    RDS(ON) < 14m? @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED2013M應(yīng)用：
    PWM applications
    Load switch
    Power management

    PED2013M典型應(yīng)用及引腳：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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