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S-P-MOS

PED2015M PDFN3.3x3.3-8L

    PED2015M是VDS=-20V,ID=-40A,RDS(ON)<11m?@VGS=-4.5V,RDS(ON)<15m?@VGS=-2.5V的P溝道MOSFET。
    PED2015M的絲印是PED2015M,PED2015M提供PDFN3.3x3.3-8L封裝。
    The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED2015M概述:
        PED2015M是VDS=-20V,ID=-40A,RDS(ON)<11m?@VGS=-4.5V,RDS(ON)<15m?@VGS=-2.5V的P溝道MOSFET。PED2015M的絲印是PED2015M,PED2015M提供PDFN3.3x3.3-8L封裝。
        The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED2015M特性:
    VDS = -20V, ID = -40A
    RDS(ON) < 11m? @ VGS=-4.5V
    RDS(ON) < 15m? @ VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED2015M應(yīng)用:
    PWM applications
    Load switch
    Power management

    PED2015M典型應(yīng)用及引腳:
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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