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S-N-MOS

PED30H15G DFN5x6-8L

    PED30H15G是VDS=30V,ID=80A,RDS(ON)<3m?@VGS=10V,RDS(ON)<4m?@VGS=4.5V的N溝道MOSFET。
    PED30H15G的絲印是PED30H15G,PED30H15G提供DFN5x6-8L封裝。
    The PED30H15G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED30H15G概述:
        PED30H15G是VDS=30V,ID=80A,RDS(ON)<3m?@VGS=10V,RDS(ON)<4m?@VGS=4.5V的N溝道MOSFET。PED30H15G的絲印是PED30H15G,PED30H15G提供DFN5x6-8L封裝。
        The PED30H15G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED30H15G特性:
    VDS = 30V, ID = 80A
    RDS(ON) < 3m?@ VGS=10V
    RDS(ON) < 4m? @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED30H15G應(yīng)用:
    Battery management
    Motor controller and driver
    PWM applications
    Load switch

    PED30H15G典型應(yīng)用及引腳

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