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S-N-MOS

PED2310N DFN2x3-6L

    PED2310N是VDS=18V，ID=7A，RDS(ON)<16m?@VGS=4.5V，RDS(ON)<17m?，@VGS=4.2V，RDS(ON)<18m?@VGS=3.8V ，RDS(ON)<24m?@VGS=2.5V的N溝道MOSFET.
    PED2310N的絲印是NG23,PED2310N提供DFN2x3-6L封裝。
    The PED2310N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PED2310N概述：
        PED2310N是VDS=18V，ID=7A，RDS(ON)<16m?@VGS=4.5V，RDS(ON)<17m?，@VGS=4.2V，RDS(ON)<18m?@VGS=3.8V ，RDS(ON)<24m?@VGS=2.5V的N溝道MOSFET.PED2310N的絲印是NG23,PED2310N提供DFN2x3-6L封裝。
        The PED2310N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PED2310N特性：
    VDS = 18V, ID = 7A
    RDS(ON) < 16m? @ VGS=4.5V
    RDS(ON) < 17m? @VGS=4.2V
    RDS(ON) < 18m? @VGS=3.8V
    RDS(ON)< 24m? @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED2310N應(yīng)用：
    PWM applications
    Load switch
    Power management

    PED2310N典型應(yīng)用及引腳：

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