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PE58120G DFN5x6-8L

    PE58120G是VDS=85V,ID=90A，RDS(ON)<6m? ，@VGS=10V，RDS(ON)<6.5m? ，@VGS=8V的N-Channel Enhancement Mode Power MOSFET.
    PE58120G的絲印是PE58120G.PE58120G提供DFN5x6-8L封裝.
    The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE58120G概述：
        PE58120G是VDS=85V,ID=90A，RDS(ON)<6m? ，@VGS=10V，RDS(ON)<6.5m? ，@VGS=8V的N-Channel Enhancement Mode Power MOSFET.PE58120G的絲印是PE58120G.PE58120G提供DFN5x6-8L封裝.
        The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58120G特性：
    VDS = 85V, ID = 90A
    RDS(ON) < 6m?  @VGS=10V
    RDS(ON) < 6.5m?  @VGS=8V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58120G應(yīng)用：
    PWM applications
    Load switch
    Power management

    PE58120G典型應(yīng)用及引腳：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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