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S-N-MOS

PE30D10 SOP8

    PE30D10是VDS=30V,ID=10A，RDS(ON)<13m?，@VGS=10V，RDS(ON)<18m?，@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.
    PE30D10的絲印是30D10.PE30D10提供SOP-8封裝.
    The PE30D10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30D10概述：
        PE30D10是VDS=30V,ID=10A，RDS(ON)<13m?，@VGS=10V，RDS(ON)<18m?，@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.PE30D10的絲印是30D10.PE30D10提供SOP-8封裝.
        The PE30D10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30D10特性：
    VDS = 30V, ID = 10A
    RDS(ON) < 13m? @ VGS=10V
    RDS(ON) < 18m?@VGS=4.5V
    High Power and current handingcapability
    Lead free product is acquired
    Surface Mount Package

    PE30D10應(yīng)用：
    PWM applications
    Load switch
    Power management

    PE30D10典型應(yīng)用及引腳圖：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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