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PE8120HM1 DFN3x3-8L

    PE8120HM1的VDS>12V,ID=20A，RDS(ON)<4.6m?，@VGS=4.5V，RDS(ON)<5.0m?，@VGS=3.8V，RDS(ON)<5.5m?，@VGS=3.0V，RDS(ON)<6.5m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8120HM1的絲印是8120HM.PE8120HM1提供DFN3x3-8L封裝.
    The PE8120HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE8120HM1概述：
        PE8120HM1的VDS>12V,ID=20A，RDS(ON)<4.6m?，@VGS=4.5V，RDS(ON)<5.0m?，@VGS=3.8V，RDS(ON)<5.5m?，@VGS=3.0V，RDS(ON)<6.5m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8120HM1的絲印是8120HM.PE8120HM1提供DFN3x3-8L封裝.
        The PE8120HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE8120HM1特性：
    VDS > 12V, ID = 20A
    RDS(ON) < 4.6m?@ VGS=4.5V
    RDS(ON) < 5.0m? @VGS=3.8V
    RDS(ON) < 5.5m? @VGS=3.0V
    RDS(ON) < 6.5m? @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8120HM1應(yīng)用：
    PWM applications
    Load switch
    Power management

    PE8120HM1典型應(yīng)用及引腳：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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