PE8124HM1概述:
PE8124HM1是VDS>12V,ID=24A,RDS(ON)<3.9m?,@VGS=4.5V,RDS(ON)<4.2m?,@VGS=3.8V,RDS(ON)<4.6m?,@VGS=3.0V,RDS(ON)<5.4m?,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8124HM1的絲印是8124HM.PE8124HM1提供DFN3x3-8L封裝.
The PE8124HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE8124HM1特性:
VDS > 12V, ID = 24A
RDS(ON) < 3.9m? @ VGS=4.5V
RDS(ON) < 4.2m? @VGS=3.8V
RDS(ON) < 4.6m? @VGS=3.0V
RDS(ON) < 5.4m? @VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE8124HM1應(yīng)用:
PWM applications
Load switch
Power management
PE8124HM1典型應(yīng)用及引腳: