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MXN2508概述：
    MXN2508是VDS=20V，ID=8A，@VGS=4.5V，RDS(ON)(Typ.)=14m?，@VGS=4.2V，RDS(ON)(Typ.)=14.4m?，@VGS=3.8V，RDS(ON)(Typ.)=15.6m?，@VGS=2.5V，RDS(ON)(Typ.)=19m?的Dual N-Channel MOSFET.MXN2508提供DFN2x5-6L封裝.
    The MXN2508 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected.

MXN2508特性：
VDS =20V，ID =8A
@VGS=4.5V RDS(ON)(Typ.)=14m?
@VGS=4.2V RDS(ON)(Typ.)=14.4m?
@VGS=3.8V RDS(ON)(Typ.)=15.6m?
@VGS=2.5V RDS(ON)(Typ.)=19m?
ESD Rating: 2000V HBM
Asvanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
New Thermally Enhanced DFN2X5-6L Package

MXN2508應(yīng)用：
PWM applications
Load switch
Battery charge in cellular handset

MXN2508典型應(yīng)用及引腳圖：